北京航空航天大学

导师详细信息

姓名：朱开贵

性别：男

出生年份：1969

职称：教授

院系：物理科学与核能工程学院

首次聘任导师时间：2009

现聘任导师一级学科名称：物理学

现聘任导师二级学科名称：凝聚态物理

聘任在第二学科培养博士生专业名称：无

聘任在自主设置学科培养博士生专业名称：无

主要研究方向及特色：1、功能薄膜材料的制备、性能及其应用研究；2、纳米材料和纳米器件；3、聚变堆材料的辐照效应；4、光伏材料及太阳能电池。

电子信箱：kgzhu@buaa.edu.cn

办公电话：010-82316106

办公地点：主楼528

通信地址：海淀区学院路37号北京航空航天大学物理系

个人简介：

1998年8月于中国科学院固体物理研究所获得博士学位；1998.9-2000-9，中国科学技术大学博士后；2000.9-2001.1，香港科技大学电子工程系访问学者；2001.2-2006.6，先后在美国德州理工大学、美国内布拉斯加大学林肯分校、美国弗吉尼亚联邦大学从事科研工作；2006年7月北京航空航天大学直评教授。多年来从事薄膜和纳米材料、低维半导体材料、半导体光电器件、等离子刻蚀以及ITER聚变反应堆中第一壁材料等方面的研究，已在Applied Physics Letters、Solar Energy Materials and Solar Cells、Solar Energy、Journal of Applied Physics等各类核心期刊上发表论文60余篇，绝大多数为SCI所收录。

Selected publications：

1. Aqing Chen, Kaigui Zhu, Huicai Zhong, Qingyi Shao, Guanglu Ge, A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering, Solar Energy Materials & Solar Cells 120(2014)157-162

2. Fangfang Chen, Kaigui Zhu∗, Aqing Chen, Weijie Huang, Lishuang Feng, Zhen Zhou, Guanglu Ge, A Monte Carlo simulation model for surface evolution by plasma etching, Applied Surface Science 280 (2013) 655–659

3. Yu-tian Ma, Ying Zhang, Guang-Hong Lu, K. Zhu, “Effect of helium implantation on mechanical properties of niobium doped tungsten”, Science China-Physics, Mechanics and Astronomy 56 (2013)1396-1400

4. Yu-tian Ma, Ying Zhang, Guang-Hong Lu, K. Zhu, Zhenhua Zhao, Long Cheng, Bo Wang, Zhong Long, Changan Chen, G-.N. Luo, “The effect of cerium doping on helium implantation behavior in tungsten”, Nuclear Instruments and Methods in Physics Research B, 307 (2013) 55 – 59

5. Aqing Chen, Kaigui Zhu, Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency, Sol. Energy, 86 (2012) 393-397

6. Kaigui Zhu, Wu Wang, Qingyi Shao, Dongning Zhao, Yongfeng Lu, and Natale Ianno, Self-assembled ordered s of nanoscale germanium Esaki tunnel diodes, Applied Physics Letters, 98 (2011) 173110

7. ZHU KaiGui, CHENG JingRan, CHANG MingChao, Wang Wu, WEI WenBo, GE GuangLu, Growth of alumina oxide nanowires in an aluminum anodization process Chinese Science Bulletin, June 2011，Vol.56，No.18: 1947-1950

8. H. Yang, C. Wang, X. Diao, H. Wang, T. Wang, K. Zhu*, A new all-thin-film electrochromic device using LiBSO as the ion conducting layer,Journal of Physics D: Applied Physics, 41 (2008) 115301

9. H. Yang, C. Wang, K. Zhu, X. Diao, H. Wang, Y. Cui, T. Wang, An all-thin-film electrochrmic device composed of MoO3-LiBSO-NiOx multiplayer structure, Chinese Physics Letters, 25 (2008) 740-742

10. K. Zhu, D. Johnstone, J. Leach, Y. Fu, H. Morkoç, G. Li, B. Ganguly, High-power photoconductive switches of 4H-SiC with Si3N4 passivation and n+-GaN subcontact, Superlattices and Microstructures, Vol 41, 264-270, April 2007

11. Y. –T. Moon, J. Xie, C. Liu, Y. Fu, X. Ni, N. Biyikli, K. Zhu, F. Yun, A. Sagar, R. M. Feenstra, A study of the morphology of GaN seed on in situ deposited SixNy and its effect on properties of overgrowth of GaN epilayers, Journal of Crystal Growth, 291 (2006) 301 ~ 308

12. K. Zhu, G. Li, D. Johnstone, Y. Fu, J. Leach, B. Ganguly, C. W. Litton, H. Morkoç, High power photoconductive switch of 4H SiC with damage-free electrodes by using n+-GaN subcontact layer, Materials Science Forum Vols. 527-529 (2006), pp. 1387-1390

13. K. Zhu, S. Doğan, Y. T. Moon, J. Leach, F. Yun, D. Johnstone, H. Morkoç, G. Li, B. Ganguly. The effect of n+-GaN subcontact layer on 4H-SiC high-power photoconductive switch Applied Physics Letters, 86 (2005) 261108

14. K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, and H. Temkin, M. Holtz, Plasma etching of AlN/AlGaInN superlattices for device fabrication Applied Physics Letters, 81 (2002) 4688 ~ 4690

15. K. Zhu, V. Kuryatkov, B. Borisov, J. Yun, G. Kipshidze, S. A. Nikishin, H. Temkin, D. Aurongzeb, and M. Holtz, Evolution of Surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching. Journal of Applied Physics, 95 (2004) 4635-4641

16. V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, I. Gherasoiu, G. Kipshidze, SNG. Chu, M. Hotlz, Y. Kudryavtsev, R. Asomoza, S. A. Nikishin, and H. Temkin, Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N Applied Physics Letters, 83 (2003) 1319 ~ 1321

17. V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. A. Nikishin, and H. Temkin, M. Holtz, Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N. Applied Physics Letters, 82 (2003) 1323 ~ 1325

18. K. Zhu, D. Johnstone, J. Leach, Y. Fu, H. Morkoç, G. Li, B. Ganguly High-power photoconductive switches of 4H-SiC with Si3N4 passivation and n+-GaN subcontact, Superlattices and Microstructures, Vol 41, 264-270, April 2007

19. G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. A. Nikishin, and H. Temkin, AlN/AlGaInN superlattice light-emitting diodes at 280 nm, Journal of Applied Physics 93 (2003) 1363 ~ 1366