宁夏大学

姓名：林雪玲

电子邮箱：lxl@nxu.edu.cn

研究方向：自旋电子学、磁性半导体

发表主要论文：

1.Xue-ling Lin, Shi-shen Yan, Ming-wen Zhao, Shu-jun Hu, Xin-xin Yao, Chong Han, Yan-xue Chen, Guo-lei Liu, You-yong Dai, and Liang-mo Mei
“Long-ranged and high temperature ferromagnetism in (Mn, C)-codoped ZnO studied by first-principles calculations”
Journal of Applied Physics107，033903 （2010）
2.Xue-ling Lin, Shi-shen Yan, Ming-wen Zhao, Shu-jun Hu, Chong Han, Yan-xue Chen, Guo-lei Liu, You-yong Dai, and Liang-mo Mei
 Possible origin of ferromagnetism in un-doped ZnO: firs-principles calculations.
Physics Letters A 375, 638-641 (2011).
3.Shu-jun Hu, Shi-shen Yan, Ming-wen Zhao, Xue-ling Lin, Xin-xin Yao, Chong Han, Yu-feng Tian, Yan-xue Chen, Guo-lei Liu and Liang-mo Mei
“Investigation the ferromagnetism exchange interaction in Co-doped ZnO magnetic semiconductors”
Scripta Materialia 64, 864-867 (2011)
4.Chong Han, Shi-shen Yan, Xue-ling Lin, Shu-jun Hu, Ming-wen Zhao, Xin-xin Yao, Yan-xue Chen, Guo-lei Liu, Liang-mo Mei
 “Effect of native defects and Co doping on ferromagnetism in HfO2: first-principles calculations”
Journal of Computational Chemistry, 32, 1298 (2011)
5.Shu-jun Hu, Shi-shen Yan, Xue-ling Lin, Xin-xin Yao, Yan-xue Chen, Guo-lei Liu, and Liang-mo Mei
“Electronic structure of Fe-doped In2O3 magnetic semiconductor with oxygen vacancies: Evidence for F-center mediated exchange interaction”
Applied Physics Letters 91, 262514 (2007).
6.Xin-Xin Yao, Shi-Shen Yan, Shu-Jun Hu, Xue-Ling Lin, Chong Han, Yan-Xue Chen, Guo-Lei Liu and Liang-Mo Mei
“Hygrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors”
New Journal of Physics 10, 055015 (2008).