北京工业大学

1、研究方向

早期从事研究包括：1化学液相淀积法制备硅衬底上的氧化硅、氧化铝薄膜；2液相外延法生长铝镓砷微探尖；3分子束外延生长低密度自组织铟砷/镓砷、铟砷/铝砷量子点及其光学性质；4半导体量子点共振隧穿二极管；5铟磷基三端弹道结器件及其在混频、鉴相中的应用；6集成平面内栅晶体管在RS触发器中的应用；7集成三端弹道结在RS触发器中的应用；8栅控两维电子气量子点（单点、双点）在单电子晶体管及电荷检测中的应用；9原子层淀积高k氧化铪薄膜及其在磷化铟衬底上制备的忆阻器、忆容器。

目前研究方向为：1化学气相淀积法制备大面积石墨烯材料，包括新型催化生长以及非催化生长等；2石墨烯在氮化镓等半导体材料以及柔性衬底上做光电器件的透明电极应用；3石墨烯在纳米电子学中的应用。

2、科研成果

发表论文、专著60余项，其中被ISIWebofScience收录的50余项，h-因子为11。部分成果选列如下:

1.K. Xu, C. Xu, J. Deng, Y. Zhu, W. Guo, M. Mao, L. Zheng, J. Sun, “Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes”, Applied Physics Letters, 102 (2013) 162102.

2.C. J. L. de la Rosa, J. Sun, N. Lindvall, M. T. Cole, Y. Nam, M. Löffler, E. Olsson, K. B. K. Teo, A. Yurgens, “Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu”, Applied Physics Letters, 102 (2013) 022101.

3.J. Sun, “A lithographic resist-based simple technology for high yield microfabrication of air bridges”, Journal of Microelectromechanical Systems, 21 (2012) 1285.

4.J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes”, Applied Physics Letters, 100 (2012) 022102.

5.J. D. Buron, D. H. Petersen, P. Bøggild, D. G. Cooke, M. Hilke, J. Sun, E. Whiteway, P. F. Nielsen, O. Hansen, A. Yurgens, P. U. Jepsen, “Graphene conductance uniformity mapping”, Nano Letters, 12 (2012) 5074.

6.J. Sun, N. Lindvall, M. T. Cole, K. T. T. Angel, T. Wang, K. B. K. Teo, D. H. C. Chua, J. Liu, A. Yurgens, “Low partial pressure chemical vapor deposition of graphene on copper”, IEEE Transactions on Nanotechnology 11 (2012) 255.

7.Y. F. Fu, B. Carlberg, N. Lindahl, N. Lindvall, J. Bielecki, A. Matic, Y. X. Song, Z. L. Hu, Z. H. Lai, L. L. Ye, J. Sun, Y. H. Zhang, Y. Zhang, J. Liu, “Templated growth of covalently bonded three-dimensional carbon nanotube networks originated from graphene”, Advanced Materials 24 (2012) 1576.

8.J. Sun, N. Lindvall, M. T. Cole, K. B. K. Teo, A. Yurgens, “Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride”, Applied Physics Letters, 98 (2011) 252107.

9.J. Sun, E. Lind, I. Maximov, H. Q. Xu, “Memristive and memcapacitive characteristics of a Au/Ti-HfO2-InP/InGaAs Diode”, IEEE Electron Device Letters, 32 (2011) 131.

10.J. Sun, D. Wallin, I. Maximov, H. Q. Xu, “A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP”, IEEE Electron Device Letters 29 (2008) 540.

3、邀请报告选列

1.2011年3月2日，应丹麦技术大学Peter Bøggild教授邀请赴丹麦做 “Copper catalyzed chemical vapor deposition of graphene”的专场报告，级别为Nanotech Institute Colloquium.

2.2011年5月9日，应首尔国立大学Yung Woo Park教授邀请赴韩国做“Copper catalyzed chemical vapor deposition of graphene”的报告，级别为the International Symposium on Carbon Electronics (ISCE).

4、电子邮件

albertjefferson@sohu.com 或 jie.sun@bjut.edu.cn。